Solution-Processed High-Voltage Organic Thin Film Transistor

A 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) based high-voltage organic thin film transistor (HVOTFT) has been demonstrated via a low temperature (< 100°C) solution-processed fabrication method on borosilicate glass. High-voltage is an area not well developed in the organic transistor field and can be of benefit to various applications requiring such an operating range beyond that of conventional thin film transistors. Here, our HVOTFT exhibited a mobility µ of 0.005 cm 2 V −1 s −1 and a breakdown voltage of V DS > 120 V, the latter being due a space-charge limiting device architecture in which the channel is partially gated. Non-saturating I-V characteristic behavior was observed. This is in contrast with our vacuum-deposited pentacene HVOTFTs which exhibited breakdown voltages of V DS > 400 V. TIPS-pentacene was grown via a drop-casting deposition, with its crystallinity and grain size deduced under XRD and SEM analysis. The HVOTFT was fabricated with a dielectric stack of a high-k Bi 1.5 Zn 1 Nb 1.5 O 7 (BZN) and parylene-C.