A new methodology for assessment of the susceptibility to data retention in floating gate non-volatile memories
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)(2017)
摘要
We have developed a new methodology with statistical simulation of leakage current resulting in V
t
shift over time of tail bit for assessment of the susceptibility to data retention in floating gate flash memories. The statistical simulation results of V
t
distribution are verified with measurements of programmed bit in actual product with good agreement. The new methodology can effectively predict the V
t
distribution of programmed bit for determining the data retention failure rate of floating gate non-volatile memories without multi-year bakes and analyzing the leakage mechanism of concern for our process and design.
更多查看译文
关键词
Leakage current, Methodology, Nonvolatile memory, Reliability, Simulation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络