Filament control of field-enhanced WO x resistive memory toward low power applications
symposium on vlsi technology, pp. 1-2, 2017.
Significant improvements for low power WO x ReRAMs have been achieved through optimizing the oxide quality and managing the sizes and densities of the initial filament. We proposed an operation sequence to evaluate the optimal forming condition which may affect the stability of the following cycling operations. An illustrative model is a...More
Full Text (Upload PDF)
PPT (Upload PPT)