Filament control of field-enhanced WO x resistive memory toward low power applications

Chao-Hung Wang
Chao-Hung Wang
Kuang-Hao Chiang
Kuang-Hao Chiang
Yung-Han Ho
Yung-Han Ho

symposium on vlsi technology, pp. 1-2, 2017.

Cited by: 0|Bibtex|Views19|DOI:https://doi.org/10.1109/VLSI-TSA.2017.7942470
Other Links: academic.microsoft.com

Abstract:

Significant improvements for low power WO x ReRAMs have been achieved through optimizing the oxide quality and managing the sizes and densities of the initial filament. We proposed an operation sequence to evaluate the optimal forming condition which may affect the stability of the following cycling operations. An illustrative model is a...More

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