InGaAs-on-Si(Ge) 3D Monolithic Integration for CMOS and More-than-Moore Technologies

3D Monolithic (3DM) integration can provide both density scaling benefits and the possibility to stack independently optimized layers at transistor level. However, top layer thermal budget poses a considerable challenge in such a technology. Due to its inherently low process temperature, InGaAs is well-suited to be used as the top layer channel material. Therefore, InGaAs has the potential to enable both low voltage-high performance advanced CMOS, as well as high-frequency device for RF/mixed-signal applications. In this regard, we show here our recent progress in InGaAs-on-SiGe 3D Monolithic technology, demonstrating state-of-the art device integration on both levels, DC and RF characterization top layer InGaAs nFETs and integrated inverters with sub-50 nm Lg down to VDD = 0.25 V.