Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation
Applied Physics Letters, pp. 2621022017.
Molybdenum disulfide (MoS2) is a promising potential replacement for Si in future microelectronic devices. Integration in electronic devices will likely involve the growth or transfer of large-area MoS2 films onto substrates and subsequent isolation of devices. In this paper, the effect of ion implantation on the electrical properties of ...More
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