Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation

Molybdenum disulfide (MoS2) is a promising potential replacement for Si in future microelectronic devices. Integration in electronic devices will likely involve the growth or transfer of large-area MoS2 films onto substrates and subsequent isolation of devices. In this paper, the effect of ion implantation on the electrical properties of ...More