Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation

Applied Physics Letters, pp. 2621022017.

Cited by: 1|Bibtex|Views7|DOI:https://doi.org/10.1063/1.4989829
Other Links: academic.microsoft.com

Abstract:

Molybdenum disulfide (MoS2) is a promising potential replacement for Si in future microelectronic devices. Integration in electronic devices will likely involve the growth or transfer of large-area MoS2 films onto substrates and subsequent isolation of devices. In this paper, the effect of ion implantation on the electrical properties of ...More

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