GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

IEEE Electron Device Letters, pp. 1094-1096, 2017.

Cited by: 0|Bibtex|Views32|DOI:https://doi.org/10.1109/LED.2017.2720688
EI WOS
Other Links: academic.microsoft.com

Abstract:

GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO2-Si (111) structure, which allows Si (111) to be exposed below the buried oxide to enable GaN epitaxial growth adjacent to Si (100). The c...More

Code:

Data:

Your rating :
0

 

Tags
Comments