GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
IEEE Electron Device Letters, pp. 1094-1096, 2017.
GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO2-Si (111) structure, which allows Si (111) to be exposed below the buried oxide to enable GaN epitaxial growth adjacent to Si (100). The c...More
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