Flexible AlGaInN/GaN Heterostructures for High-Hole-Mobility Transistors

Weijie Wang,Shahab Shervin,Seung Kyu Oh,Jie Chen, Yang Huai,Sara Pouladi,Hyunsoo Kim,Sung-Nam Lee,Jae-Hyun Ryou

IEEE Electron Device Letters（2017）

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摘要

We study the potential and feasibility of high hole mobility transistors (HHMTs) based on flexible AlGaInN/GaN heterostructures using numerical simulation. We develop a map for the sheet density of two-dimensional hole gas (2DHG) at different mole fractions of AlN, GaN, and InN of AlGaInN with mechanical bending conditions. External compressive strain via bending can induce relatively high density...

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关键词

Two dimensional hole gas,HEMTs,MODFETs,Strain,Gallium nitride,Logic gates

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