Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors

This paper investigates the recoverable degradation of GaN-on-GaN vertical transistors under positive gate bias stress. Based on combined pulsed measurements and constant voltage stress test, we demonstrate the following original results: 1) when subjected to moderate gate stress (0 V <; VGS <; 3 V), the devices show a negative threshold voltage shift, which is correlated with a decrease in on-res...