Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

IEEE Electron Device Letters, pp. 1097-1100, 2017.

Cited by: 9|Bibtex|Views17|DOI:https://doi.org/10.1109/LED.2017.2720689
EI WOS
Other Links: academic.microsoft.com

Abstract:

This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different methods to form the lateral p-n grids below the Schottky contact: 1) Mg implantation into n-GaN to form p-wells and 2) Si implantation into p-GaN to form n-wells. Specific differential O...More

Code:

Data:

Your rating :
0

 

Tags
Comments