Investigations on elimination of plasma-induced Si substrate damage for 3D NAND fabrication
international convention on information and communication technology electronics and microelectronics, pp. 431-434, 2017.
This paper presents the methods of eliminating the plasma-induced Si substrate damage in periphery regions, resulting from high aspect ratio etching process for 3D NAND fabrication. The impact of Si substrate damage is verified by the low and high bias power experiments. The result indicates more Si damage is present with high energy bomb...More
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