Electronic properties and potential applications of the heterojunction between silicon and multi-nanolayer amorphous selenium

The electronic properties of the junction formed between multi-nanolayer amorphous selenium and silicon are studied. The current-voltage (I-V) relationship of this type of junction was characterised and the result showed pn junction rectification. Capacitance-voltage (C-V) measurements were also used to obtain the value of the diffusion potential of the junction. From these data, the ideality fact...