Tungsten corrosion and recess improvement by feasible slurry and clean chemical in WCMP process

Chun-Fu Chen
Chun-Fu Chen
Yung-Tai Hung
Yung-Tai Hung

international interconnect technology conference, pp. 1-3, 2017.

Cited by: 1|Bibtex|Views17|DOI:https://doi.org/10.1109/IITC-AMC.2017.7968980
Other Links: academic.microsoft.com

Abstract:

Serious tungsten corrosion after tungsten chemical mechanical planarization (W CMP) is found to correlate to the high via resistance. According to via design layout analysis, the W plug recess is strongly dependent on the underlying metal line area and via hole size. The via W plug recess becomes worse as via size shrinkage and underlying...More

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