Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse
Solid-State Electronics(2017)
摘要
•Neutral beam etching is applied to the gate recess process of AlGaN/GaN HEMTs.•The plasma beams with sufficient and insufficient neutralization are compared.•AFM observation reveals that neutral beam can achieve smoother etched surface.•The current collapse is successfully suppressed by neutral beam etching.
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关键词
Neutral beam,GaN,Gate recess,Current collapse,HEMTs
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