Understanding Surface Treatment and ALD AlOx Thickness Induced Surface Passivation Quality of c-Si Cz Wafers

In this paper, the passivation quality of crystalline silicon (c-Si) wafers, when passivated by atomic layer deposited aluminum oxide (ALD AlOx), is investigated. Specifically, we investigated the effect of surface modification of the c-Si interface prior to the ALD AlOx deposition (via -H and -OH termination of the c-Si wafer) over a large range of AlOx thicknesses (0.4-80 nm). Fourier transform ...