Electron irradiation of near-UV GaN/InGaN light emitting diodes

I. V. Shchemerov
I. V. Shchemerov
N. M. Shmidt
N. M. Shmidt
N. A. Tal'nishnih
N. A. Tal'nishnih
E. I. Shabunina
E. I. Shabunina
R. A. Zinovyev
R. A. Zinovyev
Sergey Didenko
Sergey Didenko
P. B. Lagov
P. B. Lagov

Physica Status Solidi (a), pp. 17003722017.

Cited by: 1|Bibtex|Views2|DOI:https://doi.org/10.1002/pssa.201700372
Other Links: academic.microsoft.com

Abstract:

Irradiation with 6 MeV electrons of near-UV (peak wavelength 385–390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin...More

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