Electron irradiation of near-UV GaN/InGaN light emitting diodes

In-Hwan Lee,A. Y. Polyakov,N. B. Smirnov,I. V. Shchemerov,N. M. Shmidt,N. A. Tal'nishnih,E. I. Shabunina,Han-Su Cho,Sung-Min Hwang, R. A. Zinovyev,Sergey Didenko,P. B. Lagov,S. J. Pearton

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2017）

引用 13|浏览20

暂无评分

摘要

Irradiation with 6MeV electrons of near-UV (peak wavelength 385-390nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near E-c-0.8 and E-c-1eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1x10(16)cm(-2). The likely origin of the EL efficiency decrease is this increase in concentration of the E-c -0.8eV and E-c -1eV traps.

查看译文

关键词

defects,electroluminescence,electron irradiation,GaN,LED

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要