Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs
IEEE Electron Device Letters(2017)
摘要
We analyze the effects of ferroelectric leakage on the performance of a negative capacitance field-effect transistor (NCFET), which has an intermediate metallic layer between the ferroelectric and the high-K dielectric. We show that, when designed without taking the dielectric leakage into account, the NCFET performance can actually degrade significantlywith respect to that of the baseline FET. To...
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关键词
Field effect transistors,Capacitance,Logic gates,Mathematical model,Metals,Semiconductor device modeling,Performance evaluation
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