A novel double-density single-gate vertical-channel (SGVC) 3D NAND Flash utilizing a flat-channel thin-body device

ieee international conference on solid state and integrated circuit technology, pp. 859-862, 2016.

Cited by: 0|Bibtex|Views6|DOI:https://doi.org/10.1109/ICSICT.2016.7999062
Other Links: academic.microsoft.com

Abstract:

We have developed a novel single-gate vertical channel (SGVC) 3D NAND Flash architecture. The device is a single-gate, flat-channel TFT charge-trapping device with ultra-thin body. The ultra-thin body TFT device enables tight initial Vt distribution as well as excellent short-channel effect that is comparable to and sometimes superior tha...More

Code:

Data:

Your rating :
0

 

Tags
Comments