Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs
Applied Physics Letters, pp. 0621032017.
Electrical stressing of near-UV (peak wavelength 390–395 nm) multi-quantum-well GaN/InGaN light emitting diodes at a high drive current of 650 mA and elevated temperature of 110 °C causes a significant degradation in external quantum efficiency (EQE), correlated with the formation of nitrogen interstitial-related electron traps at Ec − 0....More
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