Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

N. A. Tal'nishnih
N. A. Tal'nishnih
I. V. Shchemerov
I. V. Shchemerov
R. A. Zinovyev
R. A. Zinovyev
S. A. Tarelkin
S. A. Tarelkin

Applied Physics Letters, pp. 0621032017.

Cited by: 4|Bibtex|Views6|DOI:https://doi.org/10.1063/1.4985190
Other Links: academic.microsoft.com

Abstract:

Electrical stressing of near-UV (peak wavelength 390–395 nm) multi-quantum-well GaN/InGaN light emitting diodes at a high drive current of 650 mA and elevated temperature of 110 °C causes a significant degradation in external quantum efficiency (EQE), correlated with the formation of nitrogen interstitial-related electron traps at Ec − 0....More

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