Theoretical investigation on hydrogen-related oxide traps in HfO2 gate dielectrics: An ab-initio study
ieee international conference on solid state and integrated circuit technology, pp. 1233-1235, 2016.
Density functional theory (DFT) calculations are performed to investigate the hydrogen-related oxygen vacancy defects in HfO2 gate dielectrics. The results demonstrate that the introduction of the hydrogen atom has less effect on micro-structure of the HfO2 oxygen vacancy defects. And the new hydrogen-related defects have good thermal sta...More
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