Analysis Of Self-Heating Effect In A Soi Ldmos Device Under An Esd Stress

The analysis of self-heating effect in a SOI LOMOS device under an ESO stress is presented in this paper. TCAO tools are used as the platform to explore the physical process of the bulk LOMOS device and the influence of buried oxide layer inserted in the substrate. Simulation results uncover that the buried oxide layer degrades the current-handling ability and changes the lattice temperature distribution of the LOMOS device, which makes the low ESO robustness of the SOI LOMOS device.