Short-wave infrared (.LAMBDA. = 3 .MU.m) intersubband polaritons in the GaN/AlN system

We demonstrate intersubband polaritons in the short-infrared wavelength range lambda < 3 mu m) relying on the GaN/AlN semiconductor system. The demonstration is given for an intersubband transition centered at lambda = 3.07 mu m (E = 403 meV). The polaritonic dispersion is measured at room temperature: a Rabi energy of 53 meV (i.e., a minimum splitting of 106 meV), which represents 13.1% of the bare transition, is demonstrated. A metal-insulator-metal resonator architecture is employed, which proves to be efficient even at these short wavelengths. Published by AIP Publishing.