High-R Poly Resistance Deviation Improvement From Suppressions of Back-End Mechanical Stresses

This paper investigates techniques for N-type high-resistance polysilicon resistors to reduce the resistance deviation which is caused by the back-end mechanical stress. In the back-end layers of the wafer, a top metal thickness equal to 3 μm is provided to increase the heat allowing current density in the metal routes of power ICs. The top metal processing yields the mechanical stress to increase...