Linearity Enhancement of a Fully Integrated 6-GHz GaN Power Amplifier
IEEE Microwave and Wireless Components Letters(2017)
摘要
A large-signal nonlinearity compensation technique is developed to improve the linearity of RF GaN power amplifiers. The design of a high power amplifier employing both common-source (CS) and common-gate (CG) GaN high-electron mobility transistors is presented for the IEEE 802.11p standard. The power amplifier is fabricated in 0.25-μm GaNon-SiC technology and occupies 1.7 mm × 1.2 mm. The measurem...
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关键词
Gallium nitride,Radio frequency,Linearity,Transistors,Distortion,Logic gates,Voltage measurement
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