Field emission from silicon tips embedded in a dielectric matrix
2017 30th International Vacuum Nanoelectronics Conference (IVNC)(2017)
摘要
In this work, we present FEAs based on silicon field emitter tips on top of silicon nanowires with four different device structures: (a) buried tips, (b) buried tips with graphene, (c) released tips, and (d) released tips with graphene. Measured device parameters are used to characterize the performance of the devices. In general, we obtain low turn-on voltages when b
FN
is low. Additional studies of current variations are required.
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关键词
FEA,field emitter tip,dielectric matrix,graphene,silicon
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