Heterogeneous Integration of Microwave GaN Power Amplifiers With Si Matching Circuits

Motonobu Sato,Yasushi Kobayashi,Yoshitaka Niida, Kenji Saito,Naoko Kurahashi, Ayumi Okano,Yukio Ito,Teruo Kurahashi,Shinya Iijima,Yoshihiro Nakata,Masaru Sato,Naoya Okamoto

IEEE Transactions on Semiconductor Manufacturing（2017）

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摘要

GaN high electron mobility transistors were integrated into monolithic microwave integrated circuits (MMICs) by molding hetero-substrates and using a redistribution layer (RDL). Driver amplifiers (DAs) and high-power amplifiers (HPAs) on SiC substrates were molded with matching circuits on Si substrates including Cu-filled through-substrate vias (TSVs), and their circuits on hetero-substrates were...

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关键词

MMICs,Contact resistance,Silicon carbide,Compression molding,Through-silicon vias,Gallium nitride,Integrated circuit interconnections,HEMTs

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