Resistive switching in MoSe2/BaTiO3 hybrid structures

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO3 (BTO) and few-layer MoSe2 are combined in a single structure. The C–V loops reveal the ferroelectric nature of both Al/Si/SiOx/BTO/Au and Al/Si/SiOx/MoSe2/BTO/Au structures and the high quality of the SiOx/MoSe2 interface in the Al/Si/SiOx/MoSe2/Au structure. Al/Si/SiOx/MoSe2/BTO/Au hybrid structures show electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe2/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with a switching ratio of ≈102 and a stable memory window, which are highly required for memory applications.