Detection of high intensity THz radiation by InP double heterojunction bipolar transistors
international conference on infrared, millimeter, and terahertz waves(2017)
摘要
We report on the photoresponse of 0.7-μm InP double heterojunction bipolar transistor to THz radiation of low and high intensities, when the collector is unbiased. At low intensities, the photoresponse is linear in radiation intensity. Under intense laser radiation, we observe a saturation at intensities u003e 15 kW/cm 2 , sample damaging arising around ∼ 40 kW/cm 2 . The photoresponse as a function of base-emitter bias dependence does not change with the radiation intensity.
更多查看译文
关键词
photoresponse,radiation intensity,THz radiation,double heterojunction bipolar transistors,laser radiation,InP
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络