Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation
international conference on infrared, millimeter, and terahertz waves(2017)
摘要
We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 150 and 300 GHz at 4K and a clear photocurrent was obtained.
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关键词
terahertz radiation detection,photocurrent,hexagonal-boron nitride-graphene-hexagonal-boron nitride stack,asymmetric dual grating gate bilayer graphene FET,temperature 4.0 K,frequency 150.0 GHz,frequency 300.0 GHz,BN-C-BN
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