Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Applied Physics Letters, pp. 1635062017.

Cited by: 3|Bibtex|Views0|DOI:https://doi.org/10.1063/1.4989599
Other Links: academic.microsoft.com

Abstract:

This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n−-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n+-GaN. The actual on-resistance of the drift r...More

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