High-efficiency silicon Mach-Zehnder modulator with vertical PN junction based on fabrication-friendly strip-loaded waveguide
2017 IEEE 14th International Conference on Group IV Photonics (GFP)(2017)
摘要
We demonstrate a vertical p-n junction silicon Mach-Zehnder modulator constructed with hydrogenated amorphous silicon strip-loaded waveguides on a flat SOI platform. A 3-mm-long phase shifter shows 0.80- to 1.86-Vcm modulation efficiency, 7.3- to 16.9-dBV loss-efficiency product, 3-dB bandwidth of 17 GHz, and 25-Gb/s operation.
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关键词
vertical p-n junction silicon Mach-Zehnder modulator,flat SOI platform,optical loss-efficiency product,hydrogenated amorphous silicon strip-loaded waveguide fabrication,bandwidth 17.0 GHz,size 3 mm,Si
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