Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

Ivan S. Esqueda,He Tian,Xiaodong Yan,Han Wang

IEEE Transactions on Electron Devices（2017）

引用 18|浏览7

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摘要

Black phosphorus (BP) has re-emerged as a promising layered material with significant potential for future nanoelectronic applications. Several recent studies have demonstrated an improvement in the transport properties of BP channels when insulated from SiO2 substrates using hexagonal boron nitride (hBN) (or when fully encapsulated). This improvement is typically characterized using extractions o...

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关键词

Scattering,Logic gates,Impurities,Field effect transistors,Substrates,Nanoelectronics,Phosphorus

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