Comparison Of Single Event Transients In Algan/Gan Schottky-Gate And Mis-Gate Hemts Using Single-Photon Absorption And Focused X-Ray Techniques

Ani Khachatrian,Nicolas J-H. Roche,Stephen P. Buchner,Andrew D. Koehler,Travis J. Anderson,Jeffrey H. Warner,Paul D. Cunningham,Joseph. S. Melinger,Dale Mcmorrow,Steven D. Lalumondiere,N. P. Wells, M. A. Tockstein, D. L. Brewe, E. C. Dillingham, J. P. Bonsall, P. Karuza, W. T. Lotshaw,S. C. Moss

2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)（2016）

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摘要

Single Photon Absorption technique with ultraviolet pulsed laser and focused X-ray beam is used to investigate single event transients in pristine AlGaN/GaN Schottky-Gate and MIS-Gate HEMTs. The results depend strongly on structure of devices.

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关键词

charge generation,GaN,HEMT,laser testing,single-photon absorption,single-event transients

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