Flexible solution-processed high-voltage organic thin film transistor

6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and pentacene-based high-voltage organic thin film transistors (HVOTFTs) have been fabricated on solid and flexible substrates via a low-temperature (<100 °C) solution-processed and vacuum-deposited fabrication method. A high- k dielectric Bi 1.5 Zn 1 Nb 1.5 O 7 and an organic dielectric parylene-C have been incorporated into the transistor design. The reliability of the HVOTFTs was analyzed under flexure, where a nonsaturating I – V characteristic behavior was observed. Here, the HVOTFT exhibited a mobility μ of 0.018 cm 2 /(V s) and a large breakdown voltage of ∣ V DS ∣ > 120 V and >550 V for TIPS-pentacene and pentacene devices, respectively. The large breakdown voltages are attributed to an organic semiconductor channel region which is partially gated, allowing for a large potential drop. Thiolphenol-based SAMs were used to help improve charge injection. Electrical measurements were also performed with samples designed with a top metal field plate to improve control of the charge carrier within the channel.