A Nonvolatile Fast-Read Two-Transistor SRAM Based on Spintronic Devices

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, pp. 93-100, 2017.

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1109/JXCDC.2017.2775518
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Abstract:

This paper proposes a compact nonvolatile three-terminal two-transistor spintronic memory cell with a fast-read operation. It is applicable to a variety of current-driven and voltage-controlled write mechanisms, such as spin diffusion, spin Hall effect, domain wall motion, and magnetoelectric effect. Compared to the prior three-terminal s...More

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