Low bias, low dark current photodetection in silicon MZM embedded with vertical PN junction

conference on lasers and electro optics, pp. 1-2, 2017.

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Abstract:

We demonstrate an all-silicon photodetection inside a modulator. Due to the high electrical field in the vertical PN junction, a relatively high responsivity of 21.5 mA/W is observed at the low bias of −7 V and low dark current of 16 nA.

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