Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors

Due to the high dissipated power densities present in GaN high-electron-mobility transistors (HEMTs) in high-power radio frequency applications, thermal analysis and thermal management of these devices are important in achieving their full potential. In this paper, we present a fundamental study of the transient thermal behavior of GaN HEMTs to aid in understanding the complex contributions of mul...