High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Sanyam Bajaj,Andrew A. Allerman,Andrew Armstrong,Towhidur Razzak,Vishank Talesara,Wenyuan Sun,Shahadat H. Sohel,Yuewei Zhang,Wu Lu,A. R. Arehart,Fatih Akyol,Siddharth Rajan

IEEE Electron Device Letters（2018）

引用 62|浏览12

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摘要

We report on ultra-wide bandgap (UWBG) Al0.7Ga0.3N channel metal-oxide-semiconductor field-effect transistors (MOSFETs) grown by metal-organic chemical vapor deposition. Employing reverse Al composition graded ohmic contact layers and 20 nm Al2O3 gate-dielectric, 250 nm thick Al0.7Ga0.3N:Si channel MOSFETs resulted in the maximum current density of 0.5 A/mm, which is the highest value reported for...

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关键词

Aluminum gallium nitride,Wide band gap semiconductors,Logic gates,MOSFET,Electric breakdown,Current density

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