Electric-field-temperature phase diagram and the properties of AgNbO3-modified Bi0.5Na0.5TiO3

For some high-performance materials, AgNbO3 (AN) is a possible doping material used to improve BNT-based ceramics and realize the measurement of their electric-field-temperature (E-T) phase diagrams. The dielectric, ferroelectric and electric field-induced strain responses of (1-x)(Bi0.5Na0.5) TiO3(BNT)-xAgNbO(3) (0 <= x <= 0.1) piezoelectric ceramics were systematically investigated in this research. A large strain of 0.225% (corresponding to a large d(33) signal of 320 pm/V) similar to that obtained in the other electric field-induced binary BNT-based ceramics was achieved with 0.05 mol AgNbO3 at room temperature. In addition, the electric-field-temperature (E-T) phase diagram for (1-x)(Bi0.5Na0.5) TiO3-xAgNbO(3) (x = 0.03) was established. The transitions between the ferroelectric, ergodic, and nonergodic relaxor states of the materials were found as a function of composition and temperature.