Negative Capacitance Carbon Nanotube FETs

Tathagata Srimani
Tathagata Srimani
Mindy D. Bishop
Mindy D. Bishop
Rebecca S. Park
Rebecca S. Park
Yosi Stein
Yosi Stein
Max M. Shulaker
Max M. Shulaker

IEEE Electron Device Letters, pp. 304-307, 2018.

Cited by: 0|Bibtex|Views9|DOI:https://doi.org/10.1109/LED.2017.2781901
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Other Links: academic.microsoft.com

Abstract:

As continued scaling of silicon FETs grows increasingly challenging, alternative paths for improving digital system energy efficiency are being pursued. These paths include replacing the transistor channel with emerging nanomaterials (such as carbon nanotubes), as well as utilizing negative capacitance effects in ferroelectric materials i...More

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