Photoluminescence Studies of Cd0.8−xPbxZn0.2S Semiconductor Compounds

The present study involves synthesis of bulk polycrystalline samples of Cd0.8−xPbxZn0.2S through low cost controlled Co-precipitation method. The synthesized compounds were characterized with respect to their crystal structure, particle size and photoluminescence properties using X-ray diffraction (XRD), and PL spectroscopy respectively. XRD results revealed that both cubic and Hexagonal phases are present in the compounds. PL studies indicated the photosensitive character of the compounds. Blue shift in the peak position in PL spectra with increase in concentration of Pb indicates the increase in the energy gap. PL spectra confirmed the formation of defect levels in the forbidden energy gap and the transition is thought to occur from donor levels to acceptor levels.