1200 V GaN vertical fin power field-effect transistors

international electron devices meeting, 2017.

Cited by: 3|Bibtex|Views10|DOI:https://doi.org/10.1109/iedm.2017.8268357
Other Links: academic.microsoft.com

Abstract:

We demonstrate record performance in a novel normally-off GaN vertical transistor with submicron finshaped channels. This vertical fin transistor only needs n-GaN layers, with no requirement for epitaxial regrowth or p-GaN layers. A specific on-resistance of 0.2 mfi-cm 2 and a breakdown voltage over 1200 V have been demonstrated with ext...More

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