Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level V t engineering for transconductance compensation
international electron devices meeting, 2017.
This study is a first demonstration of a new technology to improve the linearity of GaN-based high electron mobility transistors (HEMTs) through device-level transconductance (g m )-compensation. The increasing demand for mobile devices and internet of things (IoT) necessitates efficient wireless communication. GaN-based HEMTs are emergin...More
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