Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level V t engineering for transconductance compensation

international electron devices meeting, 2017.

Cited by: 0|Bibtex|Views6|DOI:https://doi.org/10.1109/iedm.2017.8268457
Other Links: academic.microsoft.com

Abstract:

This study is a first demonstration of a new technology to improve the linearity of GaN-based high electron mobility transistors (HEMTs) through device-level transconductance (g m )-compensation. The increasing demand for mobile devices and internet of things (IoT) necessitates efficient wireless communication. GaN-based HEMTs are emergin...More

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