A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability

international electron devices meeting, 2017.

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Abstract:

We have successfully developed a 128Gb MLC (or 192Gb TLC) 3D NAND Flash using 16-layer SGVC architecture. The produced memory density is 1.6 Gb/mm 2 for MLC or 2.4 Gb/mm 2 for TLC (including CMOS peripheral area, spared BLu0027s and blocks). Such memory density is comparable to 48-layer 3D NAND using the popular gate-all-around (GAA) st...More

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