Photoluminescence Study of Amorphous InGaZnO Thin-Film Transistors

Eric Kai Hsiang Yu,Po Chun Lai,Jerzy Kanicki

IEEE Transactions on Electron Devices（2018）

引用 5|浏览9

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摘要

The defects within optical gap of the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) before and after bias temperature stress (BTS) are studied using in situ photoluminescence (PL) spectroscopy. After applying positive BTS, the TFT threshold voltage (Vth) increased, and intensity of deep-level PL emission peak at 1.82 eV became stronger. The exact opposite is observed when negative BTS is...

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关键词

Thin film transistors,Temperature measurement,Photonic band gap,Photoluminescence,Temperature,Stimulated emission

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