Dependence of stress of GaN layer on Si substrates on growth temperature of AlN interlayerChikara Arii, Tadaatsu Nakahara,Momoko Deura,Takeshi Momose,Masakazu Sugiyama,Yoshiaki Nakano,Yukihiro ShimogakiThe Japan Society of Applied Physics(2018)引用 19|浏览12暂无评分关键词gan layer,si substrates,growth temperatureAI 理解论文溯源树样例生成溯源树,研究论文发展脉络