Fabrication of Polarity-Inverted GaN by Surface-Activated Wafer Bonding and Silicon Removal Takuya Onodera,Masahiro Uemukai,Kazuya Takahashi,Motoaki Iwaya,Isamu Akasaki,Yusuke Hayashi,Hideto Miyake,Maki Kushimoto,Heajeong Cheong,Yoshio Honda,Hiroshi Amano,Ryuji KatayamaThe Japan Society of Applied Physics(2018)引用 23|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要