Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

Transistor models have been playing a key role in designing efficient power converters. As the operating frequency of the converters becomes higher, transistor models need to represent physical device behavior accurately. This paper proposes a comprehensive surface-potential-based model of silicon carbide (SiC) power MOSFETs that realizes accurate circuit simulations. Whereas conventional simulati...