Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

In this paper, we report the device performance of a high-voltage enhancement-mode (E-mode) GaN MOSHEMT on silicon substrate. Normally off operation is realized by a self-terminated precision gate recess process on an optimized high-electron mobility transistor structure. The GaN MOSHEMT is fully pinched off at zero gate bias, suggesting a “true” normally off operation. The threshold voltage is 0....