Poly-Crystalline Silicon Waveguide Devices on Hollow Deep Trench Isolation in Standard Foundry Bulk Silicon Process

Makoto Nakai
Makoto Nakai
Edward Preisler
Edward Preisler

OFC, pp. 1-3, 2018.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1364/ofc.2018.th2a.2
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Other Links: academic.microsoft.com|dblp.uni-trier.de

Abstract:

We demonstrate poly-crystalline silicon waveguide devices on deep-trench isolation in a commercial bulk 180nm SiGe BiCMOS process without any process modifications or post-processing. At 1550 nm, the measured loss for the poly-crystalline silicon waveguide and an MMI compatible with the waveguide are around 3.0 dB/mm and 0.38 dB, respecti...More

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