3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes

Anil K. Bansal,Charu Gupta,Anshul Gupta,Ramendra Singh,Terence B. Hook,Abhisek Dixit

IEEE Transactions on Electron Devices（2018）

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摘要

Nanowire field-effect transistors (NWFETs) have emerged as promising candidates for realization of advanced CMOS technology nodes. Due to small nanowire dimensions, NWFETs are vulnerable to the impact of process-induced random local variations, such as the line edge roughness (LER) and random dopant fluctuation (RDF). NWFETs have three different device modes, namely, the inversion mode (IM), the a...

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关键词

Resource description framework,Doping,Semiconductor process modeling,Logic gates,Solid modeling,FinFETs,Performance evaluation

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